Optical properties of ionized donor-bound excitons confined in strained wurtzite ZnO/MgxZn1-xO quantum dots

被引:0
|
作者
郑冬梅 [1 ]
王宗篪 [1 ]
肖波齐 [1 ]
机构
[1] College of Electromechanical Engineering, Sanming University
关键词
ZnO quantum dot; ionized donor-bound exciton; binding energy; oscillator strength; absorption coefficient;
D O I
暂无
中图分类号
TN304.2 [化合物半导体];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.
引用
收藏
页码:50 / 55
页数:6
相关论文
共 50 条
  • [31] Optical and electrical properties of gallium-doped MgxZn1-xO
    Wei, Wei
    Jin, Chunming
    Narayan, Jagdish
    Narayan, Roger J.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
  • [32] Structural and Optical Characterization of ZnO/MgxZn1-xO Multiple Quantum Wells Based Random Laser Diodes
    Jiang, Qike
    Zheng, He
    Wang, Jianbo
    Long, Hao
    Fang, Guojia
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (12) : 7042 - 7045
  • [33] Photoluminescence of MgxZn1-xO/ZnO quantum wells grown by pulsed laser deposition
    Heitsch, Susanne
    Zimmermann, Gregor
    Lenzner, Jorg
    Hochmuth, Holger
    Benndorf, Gabriele
    Lorenz, Michael
    Grundmann, Marius
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 409 - +
  • [34] Electronic mobility limited by optical phonons in symmetric MgxZn1-xO/ZnO quantum wells with mixed phases
    Zan, Y. H.
    Ban, S. L.
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 150
  • [35] Nonlinear optical properties of an exciton bound to an ionized donor impurity in quantum dots
    Xie, Wenfang
    PHYSICS LETTERS A, 2011, 375 (08) : 1213 - 1217
  • [36] Interface and luminescence properties of pulsed laser deposited MgxZn1-xO/ZnO quantum wells with strong confinement
    Heitsch, Susanne
    Zimmermann, Gregor
    Mueller, Alexander
    Lenzner, Jorg
    Hochmuth, Holger
    Benndorf, Gabriele
    Lorenz, Michael
    Grundmann, Marius
    ZINC OXIDE AND RELATED MATERIALS, 2007, 957 : 229 - +
  • [37] DONOR BOUND EXCITONS CONFINED IN WURTZITE InGaN/GaN QUANTUM DOT NANOWIRE HETEROSTRUCTURES
    Zhang, Min
    Shi, Jun-Jie
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2013, 27 (32):
  • [38] Optical properties of Wurtzite GaN and ZnO quantum dots
    Fonoberov, VA
    Balandin, AA
    NANOPARTICLES AND NANOWIRE BUILDING BLOCKS-SYNTHESIS, PROCESSING, CHARACTERIZATION AND THEORY, 2004, 818 : 185 - 190
  • [39] Optical properties of homo- and heteroepitaxial ZnO/MgxZn1-xO single quantum wells grown by pulsed-laser deposition
    Zippel, J.
    Heitsch, S.
    Stoelzel, M.
    Mueller, A.
    von Wenckstern, H.
    Benndorf, G.
    Lorenz, M.
    Hochmuth, H.
    Grundmann, M.
    JOURNAL OF LUMINESCENCE, 2010, 130 (03) : 520 - 526
  • [40] Structural and optical properties of magnetron sputtered MgxZn1-xO thin films
    Kumar, Sanjeev
    Gupte, Vinay
    Sreenivas, K.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (13) : 3343 - 3354