THE DIFFUSION OF Zn IN GaAs AT LOW TEMPERATURE

The diffusion of Zn into GaAs at low temperature has been investigated.The experiments arecarried out in an evacuated and sealed quartz ampoule using ZnAsas the source of Zn.The relation among the junction depth（X）,the time（t）and the temperature（T）of diffusion hasbeen investigated.It is found that the sheet resistance（R）of diffusion layer increases as Xdecreases.The surface concentration（C）decreases as 1/T increases,and mobility（μ）decreases as CincreasesThe Cversus 1/（X,R）are plotted,the results are that Cincreases as 1/（X,R）increases.This is asimple method for determining Cof the multiple GaAs/GaAlAs epitaxial layer.The mechanism ofZn diffusion in GaAs and InP is discussed.This process has been applied to fabricate GaAs/GaAlAsdouble heterojunction light emitting diodes and an output power of 2—4mW is obtained,the seriesresistance is 3—5Ω.