Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits

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作者：
Huang Chang
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来源：
Journal of Systems Engineering and Electronics | 1992年 / 04期
关键词：
GaAs; MESFET; CMOS; Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits; MOSFET; length;
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摘要：
Device physics research for submicron and deep submicron space microelectronics devicesand integrated circuits will be described in three topics. 1. Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits. 2. Deep submicron LDD CMOS devices and integrated circuits. 3. C band and Ku band microwave GaAs MESFET and Ⅲ-V compound hetrojunctionHEMT and HBT devices and integrated circuits.1. Thin Film Submicron and Deep Submicron SOS / CMOS Devices and Integrated Cir-cuitsBy making use of the total quantity of carriers method, we have analyzed in details the be-havior of thin film (0.06-0.2μm) SOS/ MOS structure. This is the foundation for devicephysics of thin film SOI / MOSFET devices and integrated circuits.
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页码：3 / 4 +6-2
页数：4
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