Design and analysis of doped left-handed materials

被引：0

作者：

张洪欣 ^{[1
]}

包永芳 ^{[2
]}

吕英华 ^{[3
]}

陈天明 ^{[1
]}

王海侠 ^{[3
]}

机构：

[1] School of Electronic Engineering, Beijing University of Posts and Telecommunications

[2] Institute of Communication and Network Technology, Beijing University of Posts and Telecommunications

[3] University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2008年 / 17卷 / 05期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

LHMs; doped materials; forbidden band; pass band;

D O I：

暂无

中图分类号：

O483 [固体缺陷];

学科分类号：

070205 ; 0805 ; 080502 ; 0809 ;

摘要：

We devise three sorts of doped left-handed materials (DLHMs) by introducing inductors and capacitors into the traditional left-handed material (LHM) as heterogeneous elements. Some new properties are presented through finite- difference time-domain (FDTD) simulations. On the one hand, the resonance in the traditional LHM is weakened and the original pass band is narrowed by introducing inductors. On the other hand, the original pass band of the LHM can be shifted and a new pass band can be generated by introducing capacitors. When capacitors and inductors are introduced simultaneously, the resonance of traditional LHM is somewhat weakened and the number of original pass bands as well as its bandwidth can be changed.

引用

页码：1645 / 1651

页数：7

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