Energy band alignment at Cu2O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

被引：0

作者：

赵妍 ^{[1
]}

尹泓卜 ^{[1
]}

符亚军 ^{[1
]}

王雪敏 ^{[1
]}

吴卫东 ^{[1
]}

机构：

[1] Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics

来源：

Chinese Physics B | 2019年 / 08期

基金：

中国国家自然科学基金;

关键词：

Cu2O; ZnO; x-ray photoelectron spectroscopy; laser-molecular beam epitaxy;

D O I：

暂无

中图分类号：

TB332 [非金属复合材料];

学科分类号：

摘要：

With the increasing interest in Cu2O-based devices for photovoltaic applications, the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2O3substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu2O. A type-II band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.

引用

页码：315 / 319

页数：5

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