Sequentially deposited organic photovoltaics via self-solvent vapor annealing

被引:0
|
作者
Siru Guo [1 ]
Cenqi Yan [1 ]
Hongxiang Li [1 ]
Jiayuan Zhu [1 ]
Yingcong Zheng [1 ]
Qianqian Qi [1 ]
Xue Yan [1 ]
Hailin Yu [1 ]
Yufei Gong [2 ]
Jiayu Wang [1 ]
Jiaqiang Qin [1 ]
Lei Meng [2 ]
Yu Chen [3 ]
Yongfang Li [2 ]
Pei Cheng [1 ]
机构
[1] College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University
[2] Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences
[3] Institute of High Energy Physics, Chinese Academy of
关键词
D O I
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中图分类号
TB306 []; TM615 [太阳能发电];
学科分类号
0807 ;
摘要
Morphological control is recognized as a pivotal factor in developing high-performing solution-processed organic photovoltaics(OPVs). The essence of achieving optimal morphology in a sequentially deposited active layer lies in the precise modulation of the micro-morphology of the donor phase, encompassing molecular arrangement, orientation, and crystalline structure. The micro-morphology of the polymer donor layer plays a significant role in determining the vertical composition distribution and the adequacy of the donor/acceptor(D/A) interfaces. In this work, self-solvent vapor annealing(S-SVA) is employed to meticulously engineer the π-π stacking and crystalline domains of polymer donor PM6. This is accomplished by precisely adjusting the evaporation kinetics of the self-solvent and leveraging the swelling effect induced by residual self-solvents, thereby enhancing the self-assembly of PM6 molecules. The resultant improvements in π-π stacking and coherence length have led to efficient charge transport.These refinements have translated into a power conversion efficiency of 18.2%, accompanied by an open-circuit voltage of 0.886 V, a short-circuit current density of 25.9 mA cm-2, and a fill factor of 79.4%. The straightforward yet impactful method not only enhances film crystallinity and device performance but also holds broad application potential.
引用
收藏
页码:397 / 403
页数:7
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