Fully-Vertical GaN-on-SiC Trench MOSFETs

被引：0

作者：

Li, Jialun ^{[1
]}

Zhu, Renqiang ^{[1
,2
]}

Wong, Ka Ming ^{[3
,4
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Div Emerging Interdisciplinary Area, Hong Kong, Peoples R China

[2] Univ Elect Sci & Technol China, Shenzhen Inst Adv Study, Shenzhen 518000, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

[4] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, Wales

来源：

IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 02期

关键词：

MOSFET; Substrates; Performance evaluation; Logic gates; Silicon carbide; Proximity effects; Wide band gap semiconductors; Fabrication; Aluminum gallium nitride; Temperature dependence; Gallium nitride; fully-vertical; GaN-on-SiC; conductive buffer; trench MOSFETs; PERFORMANCE;

D O I：

10.1109/LED.2024.3520200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the first demonstration of fully-vertical GaN-on-SiC trench MOSFETs enabled by a conductive AlGaN buffer. Good ON-state device performance including a maximum drain current density of 2.43 kA/cm(2) and a high threshold voltage of 5 V has been demonstrated. The relatively high specific ON-resistance at low VDS is a result of a knee voltage induced by the yet to be optimized AlGaN/SiC heterojunction. A breakdown voltage of 334 V has been measured. Compared with quasi-vertical GaN-on-silicon trench MOSFETs, less current crowding effect is observed for fully-vertical GaN-on-SiC trench MOSFETs, as well as a better performance at elevated temperatures.

引用

页码：282 / 285

页数：4

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