Optimum Harmonic Load Prediction for RF Power Amplifier Design Using Polyharmonic Distortion Models

被引:0
|
作者
Banks, Sean [1 ]
King, Justin [1 ]
机构
[1] Trinity Coll Dublin, Dept Elect & Elect Engn, Dublin, Ireland
关键词
Active device modelling; behavioural models; harmonic load prediction; large-signal matching; load-pull; radio frequency (RF) power amplifiers (PAs); X-parameters;
D O I
10.23919/EuMIC61603.2024.10732852
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper addresses optimal load reflection coefficient prediction in nonlinear radio frequency (RF) power amplifiers (PAs) under large-signal conditions. Traditional measurement-based black box behavioural models are limited to predicting the optimal load at the fundamental frequency. However, as seen in harmonically-tuned amplifiers, the load at the harmonic frequencies can have a significant impact on output power and efficiency. In this work, an harmonic X-parameter model is extracted from a 10 W Cree CGH40010F GaN HEMT device. For the first time, optimum higher-order harmonic load predictions are reported through a constrained optimisation of this multi-harmonic X-parameter model. The results are validated numerically against measured load-pull data at the fundamental and against data simulated directly from a Cree CGH40010F device model for the higher-order harmonic frequencies. The results show that the extracted X-parameter model can predict, very accurately, the optimum loads at both the fundamental and second harmonic frequency.
引用
收藏
页码:91 / 94
页数:4
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