Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Al2O3 Interlayer

被引：2
|
作者：
Zhang, Yefan [1 ]
Yu, Shihao [1 ]
Yang, Peng [1 ]
Luo, Xiaopeng [1 ]
Xu, Hui [1 ]
Wang, Xi [1 ]
Liu, Haijun [1 ]
Liu, Sen [1 ]
Li, Qingjiang [1 ]
机构：
[1] Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Films; Zirconium; Tin; Power demand; Tunneling; Electrons; Electrodes; Switches; Microscopy; Hafnium oxide; Hf0.5Zr0.5O2(HZO); multistates; Al2O3; interlayer; ferroelectric tunnel junction (FTJ); ultralow computational power consumption;
D O I：
10.1109/TED.2024.3503533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains. Therefore, the FTJ devices with Al2O3 interlayer demonstrate amazing multilevel states (256) and ultralow computational power consumption (76.1 pW/bit). In addition, the proposed FTJ device shows high linearity (alpha(p) = - 1.262), wide modulation capability, and good reproducibility. The results indicate that the device has high potential in energy-efficient brain-like computing application.
引用
收藏
页码：228 / 233
页数：6
相关论文
共 50 条
  • [1] Ultralow-Power Synaptic Transistors Based on Ta2O5/Al2O3 Bilayer Dielectric for Algebraic Arithmetic
    Wang, Jiaxin
    Wang, Jialiang
    Zhang, Jiaona
    Huang, Weihong
    Wang, Xinwei
    Zhang, Min
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (05):
  • [2] Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2
    Hu, Tao
    Sun, Xiaoqing
    Bai, Mingkai
    Jia, Xinpei
    Dai, Saifei
    Li, Tingting
    Han, Runhao
    Ding, Yajing
    Fan, Hongyang
    Zhao, Yuanyuan
    Chai, Junshuai
    Xu, Hao
    Si, Mengwei
    Wang, Xiaolei
    Wang, Wenwu
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) : 825 - 828
  • [3] Properties of Co/Al2O3/Co tunnel junction with Co nanoparticles embedded in Al2O3
    Lee, SF
    Holody, P
    Fettar, F
    Vaurès, A
    Maurice, JL
    Barnas, J
    Petroff, F
    Fert, A
    Liou, Y
    Yao, YD
    PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, 2000, : 192 - 195
  • [4] Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier
    Cao, Yating
    Xiao, Jingchao
    Qiao, Haoxin
    Zhang, Wei
    Li, Yubao
    APPLIED PHYSICS LETTERS, 2025, 126 (06)
  • [5] Light emission from the double-barrier Al/Al2O3/Al/Al2O3/Au tunnel junction
    Wang, MX
    Sun, CX
    THIN SOLID FILMS, 2000, 371 (1-2) : 191 - 194
  • [6] The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films
    Jiang, An Quan
    Lee, Hyun Ju
    Kim, Gun Hwan
    Hwang, Cheol Seong
    ADVANCED MATERIALS, 2009, 21 (28) : 2870 - +
  • [7] Study on the light emission spectrum of Ag/Al2O3/Al tunnel junction
    Xu, RQ
    Wang, MX
    Zhang, YW
    Sun, CX
    CHINESE JOURNAL OF ELECTRONICS, 2002, 11 (01): : 89 - 91
  • [8] Improvement of Memory Window of SiliconChannel Hf0.5Zr0.5O2 FeFET by Inserting Al2O3/HfO2/Al2O3 Top Interlayer
    Han, Runhao
    Hu, Tao
    Yang, Jia
    Bai, Mingkai
    Ding, Yajing
    Shao, Xianzhou
    Dai, Saifei
    Sun, Xiaoqing
    Chai, Junshuai
    Xu, Hao
    Han, Kai
    Wang, Xiaolei
    Wang, Wenwu
    Ye, Tianchun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024,
  • [9] Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure
    Im, Solyee
    Kang, Seung-Youl
    Kim, Yeriaron
    Kim, Jeong Hun
    Im, Jong-Pil
    Yoon, Sung-Min
    Moon, Seung Eon
    Woo, Jiyong
    MICROMACHINES, 2020, 11 (10)
  • [10] Preparation and Characteristics of Cu/Al2O3/MgF2/Au Tunnel Junction
    王茂祥
    Journal of Wuhan University of Technology(Materials Science), 2009, 24 (05) : 721 - 724
12345