Study on the material removal mechanism of cemented carbide magnetic materials in magnetic field-assisted mass polishing

被引:0
|
作者
Gao, Rui [1 ]
Loh, Yee Man [1 ]
Li, Kangsen [1 ,2 ]
Chen, Rui [1 ]
Jiang, Chen [3 ]
Cheung, Chi Fai [1 ]
Wang, Chunjin [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Ind & Syst Engn, State Key Lab Ultraprecis Machining Technol, Hong Kong, Peoples R China
[2] Shenzhen Univ, Coll Mechatron & Control Engn, Shenzhen Key Lab High Performance Nontradit Mfg, Shenzhen 518060, Guangdong, Peoples R China
[3] Univ Shanghai Sci & Technol, Coll Mech Engn, Shanghai 200093, Peoples R China
关键词
Magnetic field-assisted polishing; Material removal mechanism; Cemented carbide; Ultra-precision machining; WC-CO; INSERTS;
D O I
10.1016/j.triboint.2025.110647
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Cemented carbides (WC-Co) are crucial in modern engineering due to their exceptional hardness, wear resistance, and toughness, making them ideal for various applications. Despite advancements in polishing techniques, the mechanisms for polishing WC-Co magnetic materials using magnetic field-assisted methods remain inadequately understood. This study addresses these gaps by investigating the material removal mechanism of WC-Co after electrical discharge machining (EDM) using the proposed magnetic field-assisted mass polishing (MAMP) method. A material removal distribution (MRD) model of different magnetic materials was developed to guide the experiments. Key findings include significant reductions in surface roughness, effective removal of oxide layers formed during EDM, and improved polishing uniformity and efficiency. The study also demonstrated the MAMP method's ability to maintain the form integrity of structured surfaces. This research enhances the understanding of polishing mechanisms for magnetic materials and presents a viable method for improving the surface quality of WC-Co. This research provides valuable insights into the polishing mechanisms of magnetic materials using magnetic field-assisted polishing methods.
引用
收藏
页数:16
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