Electronic properties of bilayer graphene/Janus MoSTe heterostructure

被引:0
|
作者
Yun, Junho [1 ,2 ]
Sung, Dongchul [1 ,2 ]
Kim, Yunjae [1 ,2 ]
Hong, Suklyun [1 ,2 ]
机构
[1] Sejong Univ, Graphene Res Inst, Quantum Informat Sci & Technol Ctr, Dept Phys, Seoul 05006, South Korea
[2] Sejong Univ, KUU Quantum Mat Devices Int Res Ctr, Seoul 05006, South Korea
关键词
Bilayer graphene; Janus MoSTe; van der waals heterostructure; Density functional theory (DFT) calculations; TOTAL-ENERGY CALCULATIONS; AB-INITIO; JANUS MOSSE; MONOLAYER; TRANSPORT; GAS;
D O I
10.1016/j.cap.2025.03.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A notable feature of 2D materials is their ability to form van der Waals heterostructures, enabling tailored electronic properties. Among these, Janus TMDs, with their asymmetric structure and dipole moment, exhibit unique properties like piezoelectricity, Rashba effect, and catalytic activity. In this study, we have performed density functional theory (DFT) calculations to investigate the electronic properties of a heterostructure composed of bilayer graphene (BLG) and a Janus MoSTe monolayer, focusing on the difference in interfacial contact behaviors between them. Our calculations indicate that the Dirac cone in BLG within the BLG/Janus MoSTe heterostructure opens due to electron transfer at the metal-semiconductor interface and the electric field generated by the asymmetry of Janus MoSTe. Depending on the contact orientation, this interaction results in BLG's bandgaps of 46 meV and 70 meV, respectively, highlighting the tunability and potential applications of BLG/Janus TMD heterostructures in optoelectronic devices.
引用
收藏
页码:12 / 18
页数:7
相关论文
共 50 条
  • [31] Electronic properties and the quantum Hall effect in bilayer graphene - Discussion
    Savchenko, A. K.
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2008, 366 (1863): : 219 - 219
  • [32] Configuration-Induced Rich Electronic Properties of Bilayer Graphene
    Ngoc Thanh Thuy Tran
    Lin, Shih-Yang
    Glukhova, Olga E.
    Lin, Ming-Fa
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (19): : 10623 - 10630
  • [33] A Numerical Study of the Electronic Properties of Graphene Bilayer with Local Disorder
    He, Long
    Sun, Jian
    Song, Yun
    26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5, 2012, 400
  • [34] Asymmetry-enriched electronic and optical properties of bilayer graphene
    Huang, Bor-Luen
    Chuu, Chih-Piao
    Lin, Ming-Fa
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [35] Strain Effect on the Electronic Properties of Single Layer and Bilayer Graphene
    Wong, Jen-Hsien
    Wu, Bi-Ru
    Lin, Ming-Fa
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (14): : 8271 - 8277
  • [36] Electronic properties of bilayer Bernal graphene in a modulated magnetic field
    Li, T. S.
    Lin, M. F.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2013, 348 : 61 - 67
  • [37] Electronic Properties of Graphene/h-BN Bilayer Superlattices
    Sakai, Yuki
    Saito, Susumu
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2012, 81 (10)
  • [38] Strain engineering of the electronic properties of bilayer graphene quantum dots
    Moldovan, Dean
    Peeters, Francois M.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (01): : 39 - 45
  • [39] Structural Stability and Electronic and Magnetic Properties of Fluorinated Bilayer Graphene
    Hu, Chun-Hua
    Zhang, Peng
    Liu, Hui-Ying
    Wu, Shun-Qing
    Yang, Yong
    Zhu, Zi-Zhong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (07): : 3572 - 3579
  • [40] Single-layer graphene with electronic properties of a gated bilayer
    Jaskolski, W.
    PHYSICAL REVIEW B, 2019, 100 (03)