Laser micro drilling of around 3 microns into Ajinomoto Build-up Film

被引：0

作者：

Otsu, Toshio ^{[1
]}

Tani, Shuntaro ^{[1
]}

Nagayama, Shoko ^{[2
]}

Miyamoto, Ryo ^{[2
]}

Okada, George ^{[3
]}

Nakamura, Naoyuki ^{[4
]}

Nishimae, Junichi ^{[4
]}

Tamaru, Hroharu ^{[5
]}

Kobayashi, Yohei ^{[1
]}

机构：

[1] Univ Tokyo, Chiba, Japan

[2] Ajinomoto Fine Techno Co Inc, Yokohama, Kanagawa, Japan

[3] Spectronix Co, Osaka, Japan

[4] Mitsubishi Electr Corp, Kobe, Hyogo, Japan

[5] Univ Tokyo, Tokyo, Japan

来源：

PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年

关键词：

ABF; via; DUV laser; direct laser processing; HIGH-DENSITY;

D O I：

10.1109/ECTC51529.2024.00133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the electrode spacing of the chip decreases, the diameter of the via holes in the redistribution layer or build-up substrate must also decrease. Here, we have demonstrated a via hole creation with a diameter of 3 microns on Ajinomoto Build-up Film (R) (ABF) by irradiation of a picosecond, 266-nm wavelength laser. A copper wiring pattern was created on a glass substrate, and 3-micorometer-thick ABF was attached on top of the pattern, which was used as a model substrate.

引用

页码：829 / 833

页数：5

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