Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates

被引：0

作者：

Kwak, Taemyung ^{[1
]}

Nam, Yoonseok ^{[1
]}

Kwon, Yeonghwa ^{[1
]}

Yoo, Geunho ^{[1
]}

Kim, Seong-woo ^{[2
]}

Nam, Okhyun ^{[1
]}

机构：

[1] Tech Univ Korea, Convergence Ctr Adv Nano Semicond, Dept Nano & Semicond Engn, Sangidaehak Ro, Siheung Si 429793, South Korea

[2] Orbray Co Ltd, 3-8-22 Shinden,Adachi Ku, Tokyo 1238511, Japan

来源：

基金：

新加坡国家研究基金会;

关键词：

Diamond; MOSFET; Heteroepitaxy;

D O I：

10.1016/j.diamond.2025.112022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the fabrication of depletion-mode (D-mode) and enhancement-mode (E-mode) diamond MOSFETs on the same heteroepitaxial diamond substrates. The hydrogen-terminated D-mode MOSFET with a channel length of 15 mu m and a gate length of 5 mu m achieves 85 mA/mm drain current at-5 V, while the partially oxygen- terminated E-mode MOSFET reaches 9.5 mA/mm under identical conditions. Threshold voltages are 2.1 V and-2 V for D-mode and E-mode, respectively. Off-state breakdown voltages are-395 V and-530 V, corresponding to electric fields of 0.79 MV/cm and 1.06 MV/cm. These results highlight the potential for integrating both device modes, advancing the efficiency of diamond-based power electronics.

引用

页数：6

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