Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates

被引：0
|
作者：
Kwak, Taemyung [1 ]
Nam, Yoonseok [1 ]
Kwon, Yeonghwa [1 ]
Yoo, Geunho [1 ]
Kim, Seong-woo [2 ]
Nam, Okhyun [1 ]
机构：
[1] Tech Univ Korea, Convergence Ctr Adv Nano Semicond, Dept Nano & Semicond Engn, Sangidaehak Ro, Siheung Si 429793, South Korea
[2] Orbray Co Ltd, 3-8-22 Shinden,Adachi Ku, Tokyo 1238511, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2025年 / 153卷
基金：
新加坡国家研究基金会;
关键词：
Diamond; MOSFET; Heteroepitaxy;
D O I：
10.1016/j.diamond.2025.112022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate the fabrication of depletion-mode (D-mode) and enhancement-mode (E-mode) diamond MOSFETs on the same heteroepitaxial diamond substrates. The hydrogen-terminated D-mode MOSFET with a channel length of 15 mu m and a gate length of 5 mu m achieves 85 mA/mm drain current at-5 V, while the partially oxygen- terminated E-mode MOSFET reaches 9.5 mA/mm under identical conditions. Threshold voltages are 2.1 V and-2 V for D-mode and E-mode, respectively. Off-state breakdown voltages are-395 V and-530 V, corresponding to electric fields of 0.79 MV/cm and 1.06 MV/cm. These results highlight the potential for integrating both device modes, advancing the efficiency of diamond-based power electronics.
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页数：6
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