A Study on Conducting Filament Formation in Varying 3D Memristive Thin Film Using a Phase-Field Model

被引:0
|
作者
Juston, Ambroise L. M. [1 ]
Sevic, John F. [1 ,2 ]
Kobayashi, Nobuhiko P. [2 ]
机构
[1] Embry Riddle Aeronaut Univ, Coll Engn, Prescott, AZ 86301 USA
[2] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA
来源
关键词
memristive thin film; phase-field; conductive filament; finite element; multiphysics;
D O I
10.1117/12.3029802
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experimental data suggests that multiple conductive filament (CF) formation in oxide-based memristive thin films depends on the film's geometry. We used a computational phase-field model, without a priori model constraints, and studied the effects of the variation of geometry and dimensions in a three-dimensional sample on the formation of multiple conducting filaments and how they evolve within a sample. In this paper, we show the propensity of multiple CF to form within a variation of lateral and axial dimensions as well as different depths.
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页数:5
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