Critical Current Optimization for Stacks of REBCO Tapes With Defects

被引：0

作者：

Chen, Haolan ^{[1
]}

Wang, Mingyang ^{[1
]}

Cai, Tiantian ^{[1
]}

Li, Zhuyong ^{[2
]}

Jin, Zhijian ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China

[2] Energy Singular Fus Power Technol SH Ltd, Shanghai 201306, Peoples R China

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2025年 / 35卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Copper; Stacking; Magnetic fields; Mathematical models; Faces; Resistance; Atmospheric modeling; Immune system; Electric fields; Biological system modeling; Critical current; defect; inter-tape resistance; REBCO tapes; stack structure;

D O I：

10.1109/TASC.2024.3512521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stack structure of REBCO tapes is an effective way to increase the current carrying capacity. However, under the influence of anisotropy and high aspect ratio, REBCO tape has a low utilization rate in the stack structure. The purpose of this paper is to optimize the stack structure to improve the utilization rate of REBCO tapes. In order to calculate the critical current in the electric network model of stacked structure, the J model is introduced first. Then, based on the electric network model, the influence of different stack structures (including normal REBCO tape and defective REBCO tape) on the critical current is analyzed. The optimized structure can carry more currents, which is conducive to the development of REBCO tape applications.

引用

页数：5

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