Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

被引：0

作者：

Attilio Belmonte ^{[1
]}

Gouri Sankar Kar ^{[1
]}

机构：

[1] imec,

来源：

Nature Reviews Electrical Engineering | 2025年 / 2卷 / 4期

关键词：

D O I：

10.1038/s44287-025-00162-w

中图分类号：

学科分类号：

摘要：

Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges. A new DRAM bit cell without a capacitor and with two thin-film transistors — each with an oxide semiconductor channel such as indium-gallium-zinc-oxide — shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM.

引用

页码：220 / 221

页数：1

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