Ru Nanograting-Enhanced Ga2O3 Solar-Blind Photodetectors via Localized Surface Plasmon Resonance

被引:1
|
作者
Wang, Jinjin [1 ,2 ]
Yang, Yuqing [1 ,2 ]
Chen, Zheyang [1 ,2 ]
Liu, Zeng [4 ]
Ji, Xueqiang [3 ]
Yue, Jianying [1 ,2 ]
Yan, Jieyun [1 ,2 ]
Li, Shan [3 ]
Tang, Weihua [3 ]
Li, Peigang [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China
[4] Inner Mongolia Univ, Sch Elect Informat Engn, Hohhot 010021, Peoples R China
基金
中国国家自然科学基金;
关键词
Ga2O3; nanograting; absorbanceenhancement; solar-blind; photodetector;
D O I
10.1021/acsanm.4c06687
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasmonic nanoarray structures offer great potential for high-performance photodetectors due to their excellent ability to effectively trap light. In this work, Ga2O3 solar-blind photodetectors with Ru nanogratings were designed, precisely fabricated, and characterized systematically for the first time. The Ru nanograting through localized surface plasmon resonance significantly concentrates the optical field, reduces the transmittance, and enhances light-matter interactions, ultimately increasing absorbance. Integrating the Ru nanograting into Ga2O3 films induces a blue shift in the response peak, from 245 nm in Ga2O3 films to 215 nm. Meanwhile, the peak current rises dramatically from 4.9 x 10(-11) to 1.3 x 10(-9) A. The peak responsivity and specific detectivity are increased by 4.9 x 10(2) times and 6.8 x 10(2) times, respectively. This modification also accelerates the response speed, with tau(r) and tau(d), of 0.96/0.14 s, notably shorter than the 1.57/0.47 s in Ga2O3 films. The mechanisms underlying strengthened absorbance and light-matter interactions are comprehensively explained through both simulated and experimental data. This work lays the theoretical and experimental groundwork for future high-performance Ga2O3-based photodetectors.
引用
收藏
页码:1277 / 1283
页数:7
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