Opportunities and challenges in the application of electrodeposition to few-layer transition metal dichalcogenide electronic device fabrication

被引:1
|
作者
Bartlett, Philip N. [1 ]
Greenacre, Victoria K. [1 ]
de Groot, Cornelis H. [2 ]
Noori, Yasir J. [2 ]
Reid, Gillian [1 ]
Thomas, Shibin [1 ]
机构
[1] Univ Southampton, Sch Chem & Chem Engn, Southampton SO17 1BJ, England
[2] Univ Southampton, Elect & Comp Sci, Southampton SO17 1BJ, England
基金
英国工程与自然科学研究理事会;
关键词
THIN-FILM; MOS2; HETEROSTRUCTURES; CHALCOGENIDES; EVOLUTION;
D O I
10.1016/j.coelec.2025.101651
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Few-layer transition metal dichalcogenides (TMDCs) are currently a hot topic in electrochemistry with a focus on their applications in electrocatalysis, energy conversion and storage, and sensors because of their high surface areas and unique properties. At the same time there is even greater interest in the field of electronics for the applications of few layer TMDCs in nanoelectronic devices including field effect transistors, memristors, photodetectors, and flexible electronics. Here we highlight the significant opportunities and challenges in the practically unexplored use of electrodeposition and electrochemical processes for the fabrication of TMDC based electronic devices.
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收藏
页数:8
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