Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode

Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.