Boundary conditions in the Kane two-band theory of semiconductors

被引:0
|
作者
Bezak, Viktor [1 ]
机构
[1] Comenius Univ, Dept Expt Phys, Bratislava 84248, Slovakia
关键词
D O I
10.1063/5.0196901
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A quantum theory of semiconductor heterostructures is presented. Attention is focused on the interface between two intrinsic direct-gap semiconductors, especially when the gap is narrow. The motion of electrons in the semiconductors is analyzed in the framework of the Kane two-band theory. Conditions are formulated for the envelope wave functions of the electrons on the contact plane. They generalize the Ben Daniel-Duke boundary condition which was formerly derived in a different manner. (Ben Daniel and Duke used the standard Schr & ouml;dinger equation as an equation of the second order while our conditions can concern an equation of the n-th order, with the possibility that n tends to infinity.)
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页数:12
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