A Fano resonance electro-optic modulator with high modulation efficiency in photonic multiplying

In recent years, the high-performance modulator has been widely focused in photonic computing. However, the low modulation efficiency of modulators is one of severe obstacles for applications in photonic chips. Fano resonance can improve the modulation efficiency thanks to high linearity at resonance wavelength. In this work, we demonstrate a silicon modulator with modulation depth of 13.14 dB based on Fano resonance. Only 0.34 nm is needed to tune the resonant wavelength to achieve the adjusting of optical intensity from minimum to maximum. Moreover, high modulation efficiency of 0.31 V center dot cm and the ratio of optical intensity to modulation voltage of 3.58 dB/V at resonant wavelength have been achieved. Overall, due to the high performance of our Fano resonance modulator, it has broad application potential for the photonic neural network and convolutional operation as well as optical computing chips in future.