ZnO@ZIF-8 heteronanostructures for advanced devices

被引:0
|
作者
Yeom, Chae-Min [1 ]
Kumar, Deepak [2 ]
Eadi, Sunil Babu [3 ]
Lee, Hyeon-Seung [1 ]
Thallapally, Praveen K. [4 ]
Kwon, Hyuk-Min [5 ]
Fischer, Roland A. [6 ]
Lee, Hi-Deok [1 ]
Jayaramulu, Kolleboyina [2 ]
机构
[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea
[2] Indian Inst Technol Jammu, Dept Chem, Hybrid Porous Mat Lab, Jammu 181221, Jammu and Kashm, India
[3] Indian Inst Technol, Ctr AIoT & Applicat, Jodhpur 342030, India
[4] Pacific Northwest Natl Lab, Richland, WA 99352 USA
[5] Korea Polytech Coll, Dept Semicond Proc Equipment, Semicond Convergence Campus, Anseong 17550, South Korea
[6] Tech Univ Munich, Chair Inorgan & Met Organ Chem, Sch Nat Sci, Dept Chem, Lichtenbergstr 4, D-85748 Garching, Germany
来源
CELL REPORTS PHYSICAL SCIENCE | 2024年 / 5卷 / 10期
基金
新加坡国家研究基金会;
关键词
RESISTIVE SWITCHING MEMORY; CONDUCTION MECHANISM; ZIF-8; HETEROSTRUCTURES; NANORODS;
D O I
10.1016/j.xcrp.2024.102219
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Metal-organic frameworks (MOFs) are promising materials for memristive synaptic devices due to their adaptable electrical properties and inherent porosity, which facilitate efficient ion transport and functional molecule storage. Here, we report MOFs from metabolites using ZnO as a self-sacrificial metallic source to grow zeolitic imidazolate framework-8 (ZIF-8), creating ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These resultant synaptic devices exhibit superior electrical performance compared to ZnO single-layer devices, as demonstrated by current-voltage curve analysis and long-term potentiation/long-term depression (LTP/LTD) measurements. The bilayer devices achieve significantly improved endurance, reaching 200 cycles, and have a lower average set/reset voltage of 1.48/-0.59- 0.59 V, indicating reduced power consumption. They also show an on/off ratio (HRS/LRS) of 44.54, with normalized SDs of 0.69, and nonlinearity in LTP and LTD of 0.58% and 0.30%, respectively, highlighting the ZIF-8 layer's crucial role in enhancing neuromorphic system performance and reliability.
引用
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页数:17
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