Effect of Semiconductive Protrusions in 535 kV DC XLPE Cable

被引：0

作者：

Wang, Haitian ^{[1
,2
]}

Zhou, Mingyu ^{[1
,2
]}

Luo, Yi ^{[1
,2
]}

Shi, Xiaoning ^{[3
,4
]}

Xu, Ruoyu ^{[1
,2
]}

Fechner, Tobias ^{[1
,2
]}

机构：

[1] HEM Grp, Berlin, Germany

[2] Global Energy Interconnect Res Inst Europe GmbH, Berlin, Germany

[3] Inst New Elect Mat Technol, Beijing, Peoples R China

[4] Global Energy Interconnect Res Inst Co Ltd, Beijing, Peoples R China

来源：

2024 IEEE INTERNATIONAL CONFERENCE ON HIGH VOLTAGE ENGINEERING AND APPLICATIONS, ICHVE 2024 | 2024年

关键词：

Electric stress enhancement; semiconductive protrusion; spheroidal protrusion; interface protrusions; ultra-smooth semicon; conventional semicon; surface smoothness; STRESS;

D O I：

10.1109/ICHVE61955.2024.10676031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The semi-conductive screen interface plays a very important role in HVDC cables. Its main function is to make the electric field distribution on the inner and outer surfaces of the insulation more uniform, prevent partial discharge, and reduce space charge injection. The protrusions at the semicon interface are the main factor causing the electric field distortion at the interface between the semicon and insulation. This paper will first analyze the protrusion density and protrusion height of the shield with a certain radius scale, and then study the effect of the protrusion geometry parameters on the electric field distortion. Based on the geometric parameters of the protrusion, the electric field at the protrusion tip of the 535kV DC cable semicon has finally been evaluated.

引用

页数：4

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