GeC;
5;
monolayer;
Hydrogen storage;
Density functional theory;
Two-dimensional material;
Hydrogen adsorption energy;
PHOSPHIDE BP BIPHENYLENE;
ENERGY CARRIER;
HIGH-CAPACITY;
AB-INITIO;
LI;
GRAPHENE;
1ST-PRINCIPLES;
PERFORMANCE;
BOROPHENE;
PROSPECTS;
D O I:
10.1016/j.ijhydene.2025.03.022
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Hydrogen is recognized as a clean and sustainable energy source, and the use of porous two-dimensional (2D) materials to advance the efficiency and viability of hydrogen storage systems in future energy applications is a key research focus. Herein, a comprehensive investigation has been conducted to assess the potential of the novel 2D germa-graphene GeC5 decorated with lithium (Li) atoms for hydrogen storage, employing the density functional theory (DFT) approach. Our analyses revealed that the calculated adsorption energy of the H2 molecule on the pristine GeC5 surface is outside the range required for practical hydrogen storage applications. However, the addition of Li atom significantly enhances the hydrogen adsorption energy. Our findings indicate that each Li atom can adsorb up to three H2 molecules, with a favorable adsorption energy of -0.25 eV. Considering that Li atoms do not show a cluster tendency, eight Li atoms were placed on either side of the twodimensional surface of GeC5 to maximize the H2 molecules storage. Our results demonstrate that the system can accommodate up to 24H2 molecules with an adsorption energy of -0.22 eV. This configuration offers an exceptional storage capacity, reaching 7.62 wt%, exceeding the goals of U.S. Department of Energy (DOE) target of 5.5 wt% and outperforming numerous other 2D materials. Moreover, the measured desorption temperature (TD) greatly exceeds the critical point of hydrogen, which validates the reversibility of the hydrogen adsorption process. Overall, the novel Li-decorated GeC5 monolayer offers remarkable potential as an efficient carrier for hydrogen adsorption and release, owing to its remarkable properties, paving the way for significant advances in sustainable energy technologies.
机构:
Indian Inst Technol Kharagpur, Dept Met & Mat Engn, Kharagpur 721302, W Bengal, IndiaIndian Inst Technol Kharagpur, Dept Met & Mat Engn, Kharagpur 721302, W Bengal, India
Kundu, Tarun Kumar
JOURNAL OF MOLECULAR GRAPHICS & MODELLING,
2023,
122
机构:
Shaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R ChinaShaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R China
Yang, Shuping
Pan, Ping
论文数: 0引用数: 0
h-index: 0
机构:
Shaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R ChinaShaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R China
Pan, Ping
Tong, Xiaogang
论文数: 0引用数: 0
h-index: 0
机构:
Longnan Normal Univ, Dept Phys, Longnan 742500, Peoples R ChinaShaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R China
Tong, Xiaogang
Hou, Wenjie
论文数: 0引用数: 0
h-index: 0
机构:
Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R ChinaShaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R China
Hou, Wenjie
Chen, Xihao
论文数: 0引用数: 0
h-index: 0
机构:
Chongqing Univ Arts & Sci, Sch Mat Sci & Engn, Chongqing 402160, Peoples R ChinaShaanxi Univ Technol, Sch Math & Comp Sci, Hanzhong 723000, Peoples R China
机构:
Shangqiu Normal Univ, Sch Elect & Elect Engn, Shangqiu 476000, Peoples R ChinaShangqiu Normal Univ, Sch Elect & Elect Engn, Shangqiu 476000, Peoples R China
Fan, Fengguo
Ren, Jie
论文数: 0引用数: 0
h-index: 0
机构:
City Univ Hongkong, Mat Sci & Engn Dept, Hong Kong 999077, Peoples R ChinaShangqiu Normal Univ, Sch Elect & Elect Engn, Shangqiu 476000, Peoples R China
Ren, Jie
He, Yan
论文数: 0引用数: 0
h-index: 0
机构:
Guangdong Univ Petrochem Technol, Coll Sci, Maoming 525000, Guangdong, Peoples R ChinaShangqiu Normal Univ, Sch Elect & Elect Engn, Shangqiu 476000, Peoples R China
He, Yan
Chen, Xihao
论文数: 0引用数: 0
h-index: 0
机构:
East China Normal Univ, Chongqing Key Lab Precis Opt, Chongqing Inst, Chongqing 400000, Peoples R China
Chongqing Univ Arts & Sci, Sch Mat Sci & Engn, Chongqing 402160, Peoples R China
East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R ChinaShangqiu Normal Univ, Sch Elect & Elect Engn, Shangqiu 476000, Peoples R China
机构:
Inst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, MexicoInst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, Mexico
Isidro-Ortega, Frank J.
Arellano, J. S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Autonoma Metropolitana Azcapotzalco, Area Fis Atom Mol Aplicada, Ciudad De Mexico 02200, MexicoInst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, Mexico
Arellano, J. S.
Torres-Gomez, Nayely
论文数: 0引用数: 0
h-index: 0
机构:
Inst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, MexicoInst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, Mexico
Torres-Gomez, Nayely
Gonzalez-Ruiz, Abraham
论文数: 0引用数: 0
h-index: 0
机构:
Inst Nacl Invest Nucl, Carretera Mexico Toluca S-N, Ocoyoacac 52750, Estado De Mexic, MexicoInst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, Mexico
Gonzalez-Ruiz, Abraham
Vera-Garcia, Armando
论文数: 0引用数: 0
h-index: 0
机构:
Inst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, MexicoInst Tecnol Toluca, Div Estudios Posgrad & Invest, Metepec 52149, Estado De Mexic, Mexico
机构:
Dongguk Univ, Dept Phys, Seoul 04620, South KoreaDongguk Univ, Dept Phys, Seoul 04620, South Korea
Zhang, Weibin
Zhang, Zhijun
论文数: 0引用数: 0
h-index: 0
机构:
Dongguk Univ, Dept Phys, Seoul 04620, South Korea
Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R ChinaDongguk Univ, Dept Phys, Seoul 04620, South Korea
Zhang, Zhijun
Zhang, Fuchun
论文数: 0引用数: 0
h-index: 0
机构:
Yanan Univ, Coll Phys & Elect Informat, Yanan 716000, Peoples R ChinaDongguk Univ, Dept Phys, Seoul 04620, South Korea