A 5-13 GHz GaN Power Amplifier With Maximum 51.5 dBm Output Power Using 16-Way Power Combining Technique

被引：0

作者：

Luo, Dexin ^{[1
]}

Xu, Zeji ^{[1
]}

Zhang, Zhihao ^{[1
]}

Chen, Zhuozhu ^{[1
]}

Zhang, Gary ^{[1
]}

机构：

[1] Guangdong Univ Technol, Sch Integrated Circuits, 100 Waihuan West Rd, Panyu Dist 510006, Gz, Peoples R China

来源：

2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT | 2024年

基金：

中国国家自然科学基金;

关键词：

GaN power amplifier; high power; power combining; monolithic microwave integrated circuit (MMIC);

D O I：

10.1109/ICMMT61774.2024.10671807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5-13 GHz high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) using a 0.25 mu m Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology, is presented. The MMIC PA is designed with a three-stage topology. A significant augmentation in output power is realized through an innovative output matching network that employs power combining techniques. Concurrently, the input matching network and the inter-stage matching network are intentionally designed with higher loss characteristics to broaden the frequency band and enhance the overall stability. The PA, with a chip size of 4.8 x 5.1 mm(2), achieves an output power of 48.9 to 51.5 dBm, with a power-added efficiency of 19.9 to 33.5% at a drain voltage of 40V over the frequency range of 5-13 GHz.

引用

页数：3

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