Strong Proquinoidal Acceptor Enables High-Performance Ambipolar Organic Electrochemical Transistors

被引:0
|
作者
Pan, Xiran [1 ]
Ren, Zhibo [1 ]
Chen, Yiheng [1 ]
Zheng, Yuting [1 ]
Li, Peiyun [1 ]
Sun, Wenxi [1 ]
Xu, Jingcao [1 ]
Chen, Ju-Peng [1 ]
Ge, Gao-Yang [1 ]
Li, Qi [1 ]
Xiong, Zhiyuan [1 ]
Zhang, Zhi [1 ]
Zhu, Rong [2 ]
Zheng, Yu-Qing [3 ]
Lei, Ting [1 ]
机构
[1] Peking Univ, Sch Mat Sci & Engn, Natl Key Lab Adv Micro & Nano Manufacture Technol, Key Lab Polymer Chem & Phys,Minist Educ, Beijing 100871, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci BNLMS, Key Lab Bioorgan Chem & Mol Engn,Minist Educ, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Integrated Circuits, Natl Key Lab Adv Micro & Nano Manufacture Technol, Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划; 北京市自然科学基金;
关键词
ambipolarity; inverters; organic electrochemical transistors; proquinoidal building blocks; POLYMERS; STATE;
D O I
10.1002/adma.202417146
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ambipolar organic electrochemical transistors (OECTs) can simplify manufacturing processes and reduce device footprints, yet their performance still lags behind their p-type and n-type counterparts due to limited molecular design strategies. Here, incorporating strong proquinoidal building blocks effectively addresses this challenge is demonstrated. Using a computational acceptor screening approach, three TBDOPV-based polymers are designed and synthesized: P(bgTBDOPV-T), P(bgTBDOPV-EDOT), and P(bgTBDOPV-MeOT2), all exhibiting ambipolar behavior across various donor moieties. Remarkably, P(bgTBDOPV-EDOT) achieves record-high figure-of-merit (mu C*) values, reaching 268 F cm(-1) V-1 s(-1) for p-type and 107 F cm(-1) V-1 s(-1) for n-type operations. Additionally, P(bgTBDOPV-EDOT) exhibits low operation voltages (V-Th,V-p = -0.55 V and V-Th,V-n = 0.32 V), with fast response times (tau(on)/tau(off) = 0.48/0.36 ms for p-type and 0.41/0.41 ms for n-type) and enhanced operational stability. Inverter devices based on P(bgTBDOPV-EDOT) show high voltage gains of 173 V/V. Theoretical calculations and data analysis confirm that strong proquinoidal acceptors significantly enhance the delocalization of both positive and negative polarons, offering an effective pathway for higher-performance ambipolar OECT materials.
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页数:10
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