共 26 条
- [21] Growth mechanism of SiO2 ultra-thin film on Si(100) by highly concentrated ozone supplied at low and high pressure conditions PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 67 - 77
- [23] Characterization of Si and SiOx films deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (07): : 1571 - 1577
- [26] Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors SURFACE & COATINGS TECHNOLOGY, 2013, 234 : 2 - 7