Analog and bipolar resistive switching behavior in 'p-n' junction of the p- type BEFO/n-type ZnO heterostructures

被引：0

作者：

Li, Di ^{[1
]}

Liu, Wenlong ^{[1
]}

Zong, Jin ^{[1
]}

Wei, Jiahua ^{[1
]}

Dong, Guohua ^{[2
]}

Liu, Shuxian ^{[1
]}

Tan, Guoqiang ^{[3
]}

Yuan, Qibin ^{[1
]}

Xia, Ao ^{[3
]}

Yang, Haibo ^{[3
]}

机构：

[1] Shaanxi Univ Sci & Technol, Sch Elect Informat & Artificial Intelligence, Xian 710021, Peoples R China

[2] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, State Key Lab Mfg Syst Engn, Elect Mat Res Lab,Key Lab Minist Educ, Xian 710049, Peoples R China

[3] Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Xian 710021, Peoples R China

来源：

SURFACES AND INTERFACES | 2025年 / 57卷

基金：

中国国家自然科学基金;

关键词：

BiFeO3; ZnO; Thin film; Resistive switching; p-n junction; RESISTANCE; MEMORY;

D O I：

10.1016/j.surfin.2025.105767

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nonvolatile resistive random access memory (RRAM) exhibits potential applications in logic devices and provides a hardware foundation for neuromorphic computing. Here, based on the (16-x)Bi0.95Er0.05FeO3/(x)ZnO heterostructures ((16-x)BEFO/(x)ZnO; x is 0, 4, 5, 6 and 7 layers, respectively) are prepared using the sol-gel technique. The influence of the ZnO layer thickness on the conduction mechanism of resistive switching (RS) behavior is investigated. The RS behavior is attributed to ion migration and the change in barrier height. The x = 5 sample shows the largest high resistance state/low resistance state (HRS/LRS) ratio of over 102. All heterostructures exhibit excellent I-V cycling curves, endurance characteristics, and virtually no degradation trend after 30 cycles and 1000 operations. Further, the characteristics of biological synapses have been effectively simulated.

引用

页数：8

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