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Second-order topological insulators in Kekule-patterned hexagonal biphenylene networks
被引:0
|作者:
Yang, Ning-Jing
[1
,2
]
Yang, Hai
[3
]
Huang, Zhigao
[1
,2
]
Zhang, Jian-Min
[1
,2
]
机构:
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Key Lab Quantum Manipulat & New Energy, Fuzhou 350117, Peoples R China
[2] Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China
[3] Kunming Univ, Sch Phys Sci & Technol, Kunming 650214, Peoples R China
基金:
中国国家自然科学基金;
关键词:
CORNER STATES;
D O I:
10.1063/5.0239997
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Biphenylene network, a two-dimensional material, has recently been extensively studied, owing to its potential applications. Here, we introduce an experimentally synthesized configuration of hexagonal biphenylene network (h-BPN) as a second-order topological insulator (SOTI). We begin by discussing the higher-order topological origin of h-BPN, which is an extended model of the Kekule lattice characterized by a multi-node pi-conjugation. Through first-principles calculations and tight-binding model, we reveal SOTI in h-BPN, characterized by non-zero fractional corner charges. Furthermore, we show that by varying the number of biphenylene units, h-BPN exhibits adjustable second-order topological phases with alternating parity. Specifically, odd biphenylene indices in the h-BPN system correspond to a SOTI, while even indices result in a trivial insulator. We propose that the h-BPN evolves from the Kekule lattice. These materials will have important applications in two-dimension devices as higher-order topological materials.
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页数:6
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