Vertical Quantum Confinement in Bulk MoS2

被引:0
|
作者
Obando-Guevara, Jairo [1 ,2 ]
Gonzalez-Garcia, Alvaro [1 ]
Rosmus, Marcin [3 ]
Olszowska, Natalia [3 ]
Gonzalez, Cesar [1 ,4 ]
Gonzalez-Barrio, Miguel Angel [1 ]
Tejeda, Antonio [2 ]
Mascaraque, Arantzazu [1 ]
机构
[1] Univ Complutense Madrid, Dept Fis Mat, Madrid 28040, Spain
[2] Univ Paris Saclay, Lab Phys Solides, CNRS, F-91405 Orsay, France
[3] Jagiellonian Univ, Natl Synchrotron Radiat Ctr SOLARIS, PL-30392 Krakow, Poland
[4] Inst Magnetismo Aplicado UCM ADIF, E-28232 Las Rozas De Madrid, Spain
关键词
multilayer semiconductor; two-dimensionalmaterial; quantum well states; band structure; angle-resolvedphotoemission spectroscopy; ELECTRONIC-STRUCTURE; WELL STATES; NANOSHEETS; LAYER;
D O I
10.1021/acsnano.4c13992
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We experimentally observe quantum confinement states in bulk MoS2 by using angle-resolved photoemission spectroscopy (ARPES). The band structure at the Gamma point reveals quantum well states (QWSs) linked to vertical quantum confinement of the electrons, confirmed by the absence of dispersion in k z and a strong intensity modulation with the photon energy. Notably, the binding energy dependence of the QWSs versus n does not follow the quadratic dependence of a two-dimensional electron gas. Instead, a linear behavior is observed that is consistent with a parabolic-like quantum well. This confinement arises from the mechanical exfoliation preparation method, which leads to the detachment of a multilayer stack from the underlying bulk. This is confirmed by density functional theory (DFT) calculations. The quantum confinement in bulk-like MoS2 not only offers the opportunity to explore intersubband transitions to exploit optical properties but also provides a means to study fundamental quantum phenomena in multilayer stacks of different thicknesses.
引用
收藏
页码:2540 / 2548
页数:9
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