Low Temperature Leakage Sealing Technology for Vacuum Electronic Devices

被引:0
|
作者
Zhang, Hongqi [1 ]
Zhao, Jinyu [1 ]
Wang, Bofeng [1 ]
Zhou, Yasong [1 ]
Wang, Yuntong [1 ]
Hao, Jie [1 ]
Wang, Cong [1 ]
Tian, Ning [1 ]
Gu, Honghong [1 ]
机构
[1] Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
关键词
vacuum electronic device; klystron; Au-Ge12; ultra-high vacuum; vacuum patching;
D O I
10.1109/IVECIVESC60838.2024.10694859
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Klystron as a typical vacuum electronic device has been widely used in the field of microwave devices. During the development of the klystron, leaks were generated due to factors such as process and material properties, resulting in losses due to the scrapping of the klystron. Au-Ge12 has been widely used as an excellent soldering material for material welding and metal encapsulation. In this paper, the ability of Au-Ge12 to repair leaks after klystron leakage is investigated with respect to its dispersion on oxygen-free copper and nickel-plated metal surfaces and the weldability of the two substrate materials. The experimental results show that Au-Ge12 has better dispersion on the nickel-plated surface; The dispersion is flatter on the oxygen-free copper surface with an average thickness of 78um; However, the welding properties of Au-Ge12 are worse, which can reduce the leakage rate to some extent.
引用
收藏
页数:2
相关论文
共 50 条
  • [41] Advanced plating technology for electronic devices
    Honma, H
    Oyamada, K
    Koiwa, I
    ELECTROCHEMISTRY, 2006, 74 (01) : 2 - 11
  • [42] RADIO ELECTRONIC DEVICES IN ANTENNA TECHNOLOGY
    AYZENBERG, GZ
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1974, 28 (09) : 1 - 4
  • [43] AUTOMATIC COLD PRESSURE WELDING EQUIPMENT APPLIED TO SEALING ELECTRONIC DEVICES
    ONODERA, Y
    FUJITA, T
    KOIKE, M
    NEC RESEARCH & DEVELOPMENT, 1979, (53): : 80 - 86
  • [44] LOW-TEMPERATURE CERAMIC DIP SEALING
    WANG, CH
    WAKELY, WT
    AMERICAN CERAMIC SOCIETY BULLETIN, 1973, 52 (09): : 716 - 716
  • [45] Novel Low Temperature Hermetic Sealing of Micropackages
    Marinis, Thomas F.
    Soucy, Joseph W.
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1552 - 1561
  • [46] Growth of low-temperature Si nanowires suitable for electronic memory devices
    Liu, YuHao
    MRS BULLETIN, 2016, 41 (11) : 841 - 842
  • [47] Low temperature-cured electrically conductive pastes for interconnection on electronic devices
    Lim, Ho Sun
    Kim, Seung-Nam
    Lim, Jung Ah
    Park, Seong-Dae
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (38) : 20529 - 20534
  • [48] HIGH AND LOW-TEMPERATURE SEALING DIAPHRAGMS
    SHPINDLER, VM
    RUSSIAN ENGINEERING JOURNAL, 1976, 56 (08): : 50 - 51
  • [49] Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices
    Wei, Dacheng
    Lu, Yunhao
    Han, Cheng
    Niu, Tianchao
    Chen, Wei
    Wee, Andrew Thye Shen
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2013, 52 (52) : 14121 - 14126
  • [50] Global Optimization Methods to Design Vacuum Electronic Devices
    Wang Huihui
    Meng Lin
    Liu Dagang
    Liu Laqun
    2016 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2016,