Low Temperature Leakage Sealing Technology for Vacuum Electronic Devices
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Zhang, Hongqi
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Zhang, Hongqi
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Zhao, Jinyu
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Zhao, Jinyu
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Wang, Bofeng
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Wang, Bofeng
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Zhou, Yasong
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Zhou, Yasong
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Wang, Yuntong
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Wang, Yuntong
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Hao, Jie
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Hao, Jie
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Wang, Cong
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Wang, Cong
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Tian, Ning
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Tian, Ning
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Gu, Honghong
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Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R ChinaChinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Gu, Honghong
[1
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机构:
[1] Chinese Acad Sci, Aerosp Informat Res Inst, Key Lab High Power Microwave Sources & Technol, Beijing 100190, Peoples R China
Klystron as a typical vacuum electronic device has been widely used in the field of microwave devices. During the development of the klystron, leaks were generated due to factors such as process and material properties, resulting in losses due to the scrapping of the klystron. Au-Ge12 has been widely used as an excellent soldering material for material welding and metal encapsulation. In this paper, the ability of Au-Ge12 to repair leaks after klystron leakage is investigated with respect to its dispersion on oxygen-free copper and nickel-plated metal surfaces and the weldability of the two substrate materials. The experimental results show that Au-Ge12 has better dispersion on the nickel-plated surface; The dispersion is flatter on the oxygen-free copper surface with an average thickness of 78um; However, the welding properties of Au-Ge12 are worse, which can reduce the leakage rate to some extent.
机构:
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aramaki Aza Aoba, Aoba-ku, Miyagi, SendaiDepartment of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aramaki Aza Aoba, Aoba-ku, Miyagi, Sendai