High-Performance n-Type OFETs Enabled by Pyridine-Substituted Diketopyrrolopyrrole Organic Semiconductor and Elastomer Stretchable Blends

被引:0
|
作者
Kothandaraman, Rajesh [1 ]
He, Waner [2 ]
Kranthiraja, Kakaraparthi [1 ]
Manzhos, Sergei [2 ]
Mcneill, Christopher R. [3 ]
Li, Yong [4 ]
Xu, Yanan [5 ]
Fairfull-Smith, Kathryn E. [1 ]
Michinobu, Tsuyoshi [2 ]
Sonar, Prashant [1 ]
机构
[1] Queensland Univ Technol QUT, Ctr Mat Sci, Sch Chem & Phys, Brisbane 4000, Australia
[2] Inst Sci Tokyo, Sch Mat & Chem Technol, Ookayama 2-12-1,Meguro Ku, Tokyo 1528552, Japan
[3] Monash Univ, Dept Mat Sci & Engn, Wellington Rd, Clayton, Vic 3800, Australia
[4] CSIRO Energy Ctr, 10 Murray Dwyer Cct, Mayfield West, NSW 2304, Australia
[5] Queensland Univ Technol QUT, Cent Analyt Res Facil, Brisbane 4000, Australia
关键词
electron mobility; n-type organic semiconductor; pyridine-substituted diketopyrrolopyrrole; side chain; stretchable blend; vertical phase separation; POLYMER SEMICONDUCTORS; MOLECULAR DESIGN; MOBILITY; IMPACT;
D O I
10.1002/admt.202401518
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The contemporary research on developing n-type organic semiconducting materials (OSMs) has great significance for stretchable organic field-effect transistors (OFETs). Two n-type OSMs (DPPPy-C10-TN and DPPPy-C-Si-TN) based on alkyl/siloxane-substituted pyridine flanked diketopyrrolopyrrole (DPPPy) end capped with thienyl naphthalimide (TN) are reported. Although DPPPy-C10-TN and DPPPy-C-Si-TN show similar optical and electrochemical properties, they show a significant variation in their morphological and crystalline properties in pristine form or within an elastic polymer (polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene; SEBS) matrix, which further reflects on their electrical properties. Interestingly, bottom-gate top-contact OFETs of as-cast pristine DPPPy-C10-TN show a higher electron mobility (mu e = 0.103 cm2 V-1 s-1) than DPPPy-C-Si-TN (mu e = 0.0145 cm2 V-1 s-1), underscoring the influence of alkyl substitution on charge transport efficiency. By contrast, stretchable DPPPy-C-Si-TN:SEBS blend shows a significantly higher electron mobility (mu e = 0.322 cm2 V-1 s-1) in comparison to the DPPPy-C10-TN:SEBS blend (mu e = 0.00196 cm2 V-1 s-1). To the best of the authors' knowledge, this is the first successful report about a high mu e value reported for a DPPPy-based n-type small molecule stretchable OSM blend in OFETs and provides new insights into the design and processing principles of small molecule based OSMs for flexible electronics.
引用
收藏
页数:11
相关论文
共 50 条
  • [31] High performance n-type vertical organic phototransistors
    Yeliu, Kaiheng
    Zhong, Jianfeng
    Wang, Xiumei
    Yan, Yujie
    Chen, Qizhen
    Ye, Yun
    Chen, Huipeng
    Guo, Tailiang
    ORGANIC ELECTRONICS, 2019, 67 : 200 - 207
  • [32] Cyano-functionalized organic and polymeric semiconductors for high-performance n-type organic electronic devices
    Li, Yongchun
    Huang, Enmin
    Guo, Xugang
    Feng, Kui
    MATERIALS CHEMISTRY FRONTIERS, 2023, 7 (18) : 3803 - 3819
  • [33] Organic-semiconductor: Polymer-electret blends for high-performance transistors
    Peng Wei
    Shengtao Li
    Dongfan Li
    Han Yu
    Xudong Wang
    Congcong Xu
    Yaodong Yang
    Laju Bu
    Guanghao Lu
    Nano Research, 2018, 11 : 5835 - 5848
  • [34] Organic-semiconductor: Polymer-electret blends for high-performance transistors
    Wei, Peng
    Li, Shengtao
    Li, Dongfan
    Yu, Han
    Wang, Xudong
    Xu, Congcong
    Yang, Yaodong
    Bu, Laju
    Lu, Guanghao
    NANO RESEARCH, 2018, 11 (11) : 5835 - 5848
  • [35] A Furan-Thiophene-Based Quinoidal Compound: A New Class of Solution-Processable High-Performance n-Type Organic Semiconductor
    Xiong, Yu
    Tao, Jingwei
    Wang, Ruihao
    Qiao, Xiaolan
    Yang, Xiaodi
    Wang, Deliang
    Wu, Hongzhuo
    Li, Hongxiang
    ADVANCED MATERIALS, 2016, 28 (28) : 5949 - +
  • [36] Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells
    Sun, Huiliang
    Tang, Yumin
    Guo, Han
    Uddin, Mohammad Afsar
    Ling, Shaohua
    Wang, Ruizhi
    Wang, Yingfeng
    Zhou, Xin
    Woo, Han Young
    Guo, Xugang
    SOLAR RRL, 2019, 3 (02)
  • [37] Simplified synthetic routes for low cost and high photovoltaic performance n-type organic semiconductor acceptors
    Li, Xiaojun
    Pan, Fei
    Sun, Chenkai
    Zhang, Ming
    Wang, Zhiwei
    Du, Jiaqi
    Wang, Jing
    Xiao, Min
    Xue, Lingwei
    Zhang, Zhi-Guo
    Zhang, Chunfeng
    Liu, Feng
    Li, Yongfang
    NATURE COMMUNICATIONS, 2019, 10 (1)
  • [38] Simplified synthetic routes for low cost and high photovoltaic performance n-type organic semiconductor acceptors
    Xiaojun Li
    Fei Pan
    Chenkai Sun
    Ming Zhang
    Zhiwei Wang
    Jiaqi Du
    Jing Wang
    Min Xiao
    Lingwei Xue
    Zhi-Guo Zhang
    Chunfeng Zhang
    Feng Liu
    Yongfang Li
    Nature Communications, 10
  • [39] High-performance transparent inorganic–organic hybrid thin-film n-type transistors
    Lian Wang
    Myung-Han Yoon
    Gang Lu
    Yu Yang
    Antonio Facchetti
    Tobin J. Marks
    Nature Materials, 2006, 5 : 893 - 900
  • [40] High-performance n-type organic field-effect transistors with ionic liquid gates
    Ono, S.
    Minder, N.
    Chen, Z.
    Facchetti, A.
    Morpurgo, A. F.
    APPLIED PHYSICS LETTERS, 2010, 97 (14)