Interface Engineering with BPhen:Cs2CO3 for High-Performance and Stable Inverted Nonfullerene Organic Solar Cells

被引:0
|
作者
Park, Sujung [1 ,2 ]
Wibowo, Febrian Tri Adhi [3 ,4 ]
Kim, Dohui [1 ,2 ]
Roe, Jina [5 ,6 ]
Lee, Jin Hee [7 ]
Seo, Jung Hwa [7 ]
Kim, Jin Young [5 ,6 ]
Jang, Sung-Yeon [3 ,4 ]
Cho, Shinuk [1 ,2 ]
机构
[1] Univ Ulsan, Dept Semicond Phys & Engn, Ulsan, South Korea
[2] Univ Ulsan, Engn & Energy Harvest Storage Res Ctr, Ulsan, South Korea
[3] Ulsan Natl Inst Sci & Technol, Dept Energy Engn, Ulsan, South Korea
[4] Ulsan Natl Inst Sci & Technol, Ctr Energy Mat, Ulsan, South Korea
[5] Ulsan Natl Inst Sci & Technol UNIST, Dept Energy Engn, Ulsan, South Korea
[6] Ulsan Natl Inst Sci & Technol UNIST, Sch Energy & Chem Engn, Ulsan, South Korea
[7] Univ Seoul, Dept Phys, Seoul, South Korea
来源
SOLAR RRL | 2025年
关键词
device stability; interfacial layer; inverted organic solar cells; ZnO electron transport layer; ELECTRON-TRANSPORT LAYER; CONJUGATED POLYELECTROLYTE; EFFICIENT; ZNO; HETEROJUNCTION; RECOMBINATION; NONGEMINATE; STABILITY; LIFETIME;
D O I
10.1002/solr.202400902
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The widely used ZnO electron transport layer in inverted nonfullerene organic solar cells (nf-OSCs) offers advantages such as excellent electron mobility and optical transparency. However, challenges arise from surface defects in solution-processed ZnO, where oxygen-containing defects can penetrate the photoactive layer, leading to photocatalytic reactions with nonfullerene acceptors under UV light, thereby compromising device stability. Another challenge is that most recent high-efficiency nf-OSCs employ conventional structures, while inverted structures exhibit comparatively lower performance. To develop stable and high-performance inverted nf-OSCs, interface modification is essential to mitigate photocatalytic issues and enhance the relatively lower power conversion efficiency (PCE). To overcome these limitations, we introduce bathophenanthroline (BPhen) doped with Cs2CO3. The BPhen:Cs2CO3 layer creates suitable energy levels, enhancing electron transport and reducing charge recombination. This approach significantly improves current density and fill factor, resulting in a notable enhancement in the PCE of pristine ZnO devices from 15.54% to 17.09% in PM6:Y6 inverted nf-OSCs. Furthermore, ZnO/BPhen:Cs2CO3 devices exhibit excellent stability, retaining similar to 83% of their initial efficiency even after 1000 h without encapsulation, showcasing superior stability compared to pristine ZnO-based devices.
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页数:9
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