Inherent Lattice Distortion Engineering via Magnetic Field for High-Quality Strained MAPbI3 Perovskite Single Crystals

被引:0
|
作者
Ogunleye, Abdulazeez M. [1 ]
Lee, Hakseon [1 ]
Awwal, Adeshina Mohammad [2 ]
Kim, Gunwoo [1 ]
Kim, Hyunmin [2 ]
Choi, Yoonmi [3 ]
Park, Jonghoo [1 ]
机构
[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
[2] Daegu Gyeongbuk Inst Sci & Technol DGIST, Div Biotechnol, Daegu 42988, South Korea
[3] Korea Res Inst Chem Technol KRICT, Chem Anal Ctr, Daejeon 34114, South Korea
基金
新加坡国家研究基金会;
关键词
magnetic field-assisted ITC; octahedral distortion; perovskite single crystals; strained perovskite; thermal stability; SOLAR-CELL; CH3NH3PBI3; GROWTH;
D O I
10.1002/admi.202400781
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Lattice distortion in perovskites (AMX3) significantly impacts their stability and power conversion efficiency, often in a trade-off. The inherent lattice distortion is predominantly influenced by the size, orientation, and composition of the A-site cations. Notably, organic-inorganic hybrid lead halide perovskites with organic cations like methylammonium (MA) and formamidinium (FA) demonstrate high power conversion efficiency but compromised stability. Here, a novel synthesis method is presented for high-quality strained MAPbI3 single crystals that offers not only enhanced optoelectronic properties but also improved thermal stability. This technique leverages the paramagnetic nature of the MA+ ion to manipulate lattice distortion. During the inverse temperature crystallization process, the dipole moment of the MA+ ion aligns with the direction of the external magnetic field. Correlating Fourier-transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) analysis demonstrates that this alignment, which induces compressive lattice strain, significantly enhances the carrier mobility from 68.1 to 487 cm2 V s-1, representing a sevenfold increase in hole mobility compared to the control sample. Additionally, it increases the carrier lifetime by 123%, from 23.458 to 52.364 ns, and improves thermal stability up to 230 degrees C. This findings reveal insights into the interplay between structural modifications and electronic properties, paving the way for tailored applications in photovoltaics, light-emitting devices, and beyond.
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页数:7
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