The Role of Surface Defects in Photoluminescence and Decay Dynamics of High-Quality Perovskite MAPbI3 Single Crystals

被引:52
|
作者
Ding, Jie [1 ]
Lian, Zhipeng [1 ]
Li, Yu [2 ]
Wang, Shufeng [2 ]
Yan, Qingfeng [1 ]
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源
关键词
DISLOCATION DENSITIES; LENGTHS; GROWTH; CH3NH3PBI3; WAFERS;
D O I
10.1021/acs.jpclett.8b01898
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Halide perovskites have recently been a star semiconductor material in photovoltaic field owing to their excellent optoelectronic properties. An in-depth understanding of the photoluminescence and carrier diffusion in these materials may facilitate the implementation of high-performance optolelctronic devices. Here, we report an unusual photoluminescence quenching phenomenon in MAPbI(3) single crystals. Interestingly, MAPbI(3) single crystal with higher crystalline quality shows a lower photoluminescence emission and a shorter decay time, indicating the surface imperfection plays an important role to the photoluminescence. The quick quenching process is attributed to the synergistic effect of localized effect at the defects and rapid inward diffusion.
引用
收藏
页码:4221 / 4226
页数:11
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