Influence of Thermal Shock on ZnO Film Related to Si/ZnO Interface

Influence of thermal shock on Si-based ZnO film related to Si/ZnO interface is studied through experiments and simulations. ZnO films are deposited onto silicon wafers by radio frequency magnetron sputtering, the models near Si/ZnO interface are constructed, and the evolution of photoelectric properties after different thermal shocks is investigated herein. The results show that thermal shock can improve optical properties of Si-based ZnO film in the wavelength range of 300-500 nm; the structures of SiO32-$\text{SiO}_{3}<^>{2 -}$ and SiO44-$\text{SiO}_{4}<^>{4 -}$ form at the Si/ZnO interface under thermal shock, but the structures associated with Si/ZnO interface are unstable after thermal shock. The influence of thermal shock on optical properties of Si-based ZnO films is revealed, which can be used to understand and guide the design of Si/ZnO-based optical devices.