Nanoscale ultrafast dynamics in Bi2Te3 thin film by terahertz scanning near-field nanoscopy

被引:0
|
作者
Huang, Ziyu [1 ,2 ]
Li, Jing [3 ]
Li, Peiyan [1 ,2 ]
Du, Lin [1 ,2 ]
Dai, Mingcong [1 ,2 ]
Cai, Jiahua [1 ,2 ]
Ren, Zejun [1 ,2 ]
Nie, Tianxiao [3 ]
Wu, Xiaojun [1 ,2 ,4 ,5 ]
机构
[1] Beihang Univ, Hangzhou Int Innovat Inst, Hangzhou 311115, Peoples R China
[2] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China
[3] Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
[4] Chinese Acad Sci, Shanghai Adv Res Inst, Zhangjiang Lab, Shanghai 201204, Peoples R China
[5] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
MECHANISM; SURFACE; BI2SE3;
D O I
10.1016/j.isci.2025.111840
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Ultrafast laser interactions with topological insulators (TIs) have garnered tremendous interest for understanding light-matter interactions and developing optoelectronic devices across visible to terahertz (THz) regions owning to their high carrier mobility and sensitivity to electric fields. In particular, within the THz regime, TIs hold considerable promise to realize advanced emitters, modulators, and detectors because of their fascinating ultrafast THz dynamics. However, a detailed understanding of TIs' THz dynamics necessitates access to both nanoscale and femtosecond timescale. By utilizing THz scattering-type scanning near-field optical microscopy, we investigated THz time-domain spectroscopy, optical-pump THz probe, and THz emission in TI thin films at nanoscale. We analyzed their static scattering characteristics, morphology, and observed THz emission and photocarrier dynamics lasting approximately 10 ps, with dependencies of thickness and power. Our findings reveal the nanoscale ultrafast dynamics of TIs and demonstrate THz s-SNOM's potential to enhance compact THz device development.
引用
收藏
页数:11
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