Electric field-induced defect redistribution along a near 23° (100) tilt grain boundary in SrTiO3

被引:0
|
作者
Hahn, William [1 ]
Lupini, Andrew R. [2 ]
van Benthem, Klaus [1 ,3 ]
机构
[1] Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN USA
[3] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL USA
基金
美国国家科学基金会;
关键词
electric field effects; grain boundaries; oxygen vacancies; space charge; TEM; ACCEPTOR-DOPED TITANATES; ATOMIC-STRUCTURE; GROWTH; CHEMISTRY; MECHANISM; SIGMA-13; LAYER;
D O I
10.1111/jace.20459
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An electrostatic field strength of 11.6 V/mm was applied during thermal annealing along the grain boundary plane of a near 23 degrees (100) tilt grain boundary in SrTiO3. Electron microscopy characterization revealed the development of an increased number of pores located at the grain boundary plane near the positive electrode. Toward the negative electrode a lower physical density at the interface and a wider grain boundary core structure was observed compared to areas close to the positive electrode. Atomic resolution scanning transmission electron microscopy identified different structure units for the grain boundary core in the proximity of the two electrodes and a higher density of interfacial steps close to the negative electrode. Electron energy-loss spectroscopy confirms modifications of the local interfacial bonding, stronger reduction of Ti cations, and distorted Ti & horbar;O octahedra close to the negative electrode. The experimental observations demonstrate field-induced redistribution of oxygen vacancies along the interface plane accommodated by disconnection movement.
引用
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页数:10
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