Nanostructured thin film SrCo0.8Nb0.1Ta0.1O3-δ cathode for low-temperature solid oxide fuel cells

被引:0
|
作者
Ryu, Sangbong [1 ]
Hwang, Jaewon [1 ]
Lee, Sanghoon [1 ]
Jeong, Wonyeop [1 ]
Lee, Myung Seok [1 ]
Yu, Wonjong [2 ]
Cha, Suk Won [1 ,3 ]
机构
[1] Seoul Natl Univ, Dept Mech & Aerosp Engn, Gwanak Ro 1, Seoul 08826, South Korea
[2] Kyung Hee Univ, Dept Mech Engn, 1732 Deogyeong Daero, Yongin 17104, Gyeonggi Do, South Korea
[3] Seoul Natl Univ, Inst Adv Machines & Design, Seoul 08826, South Korea
基金
新加坡国家研究基金会;
关键词
Low-temperature solid oxide fuel cell; Thin film; Pulsed laser deposition; Sputtering; LANTHANUM STRONTIUM COBALTITE; HIGH-PERFORMANCE CATHODE; PEROVSKITE; DEPOSITION;
D O I
10.1016/j.ijhydene.2024.08.349
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanostructured perovskite-type cathodes are considered essential for the realization of high-performance solid oxide fuel cell (SOFC). However, perovskite-type cathode materials demonstrating high electrochemical performance in the low-temperature operating region below 600 degrees are limited. SrCo0.8Nb0.1Ta0.1O3-delta (SCNT) has been identified as a material that exhibits exceptional performance even in the low-temperature region of 500 degrees C. This paper investigates the growth behavior and electrochemical properties of SCNT thin films for SOFC cathode applications. Pulsed laser deposition (PLD) was employed to fabricate SCNT films under varying chamber pressures: 5 mTorr, 75 mTorr, and 150 mTorr. Systematic analysis through X-ray diffraction and X-ray photoelectron spectroscopy indicates that the structural factors of PLD perovskite oxide nanostructures, such as grain size, porosity, and in-plane connectivity, are intricately influenced by deposition pressure without affecting crystallinity and chemical composition. The findings demonstrate that achieving desired electrochemical properties of the nanostructured PLD perovskite oxide necessitates specific optimal deposition conditions for these structural parameters. Electrochemical assessments revealed an optimal nanostructure achieved with 1200 nm at 75mTorr, demonstrating enhanced power density due to increased active reaction surface area, which significantly reduced resistances in ohmic and polarization. Excessive thickness, however, led to performance decline due to film delamination. Integration of optimized SCNT films into an anodic aluminum oxide supported thin film SOFC exhibited 907 mW/cm2 of peak power density at 550 degrees C.
引用
收藏
页码:558 / 565
页数:8
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