A 113-nW, Sub-1 V Single BJT-Based Voltage and Current Reference in One Circuit

This article presents a single bipolar junction transistor (BJT)-based voltage and current reference combined in one circuit. The beta-multiplier is used to generate the proportional-to-absolute-temperature (PTAT) voltage, which is added to the fractional emitter-base voltage (V-EB) of the BJT to achieve a temperature-independent output reference voltage (V-REF). The reference current (I-REF) is obtained by the ratio of V-REF and a temperature-compensated resistor (TCR), where TCR is implemented using a series connection of a complementary-to-absolute-temperature (CTAT) unsilicided P+ poly resistor and a PTAT N-well resistor. The proposed circuit is designed in a 65-nm low-power CMOS process and occupies an area of 0.1 mm(2). Post-layout Monte-Carlo simulations show that the achieved average temperature coefficients of V-REF and I-REF are 13.9 ppm/degrees C and 83.85 ppm/degrees C, respectively, across a temperature range from -40 degrees C to 120 degrees C. The mean values of VREF and IREF are 243.34 mV and 9.97 nA, respectively, with a standard deviation of 2.49 mV and 454 pA, respectively. Moreover, it operates from a minimum supply of 0.85 V, with a total power dissipation of 113 nW at 120 degrees C.