Cryogenic Ge-on-Si avalanche photodiodes operating at 1550 nm wavelength

被引：0

作者：

Liu, Xiaofei ^{[1
]}

Liu, Jingchuan ^{[1
]}

He, Funan ^{[1
]}

Ma, Ruyuan ^{[1
]}

Zhao, Xingyan ^{[1
]}

Zhong, Qize ^{[1
]}

Dong, Yuan ^{[1
]}

Hu, Ting ^{[1
]}

机构：

[1] Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first demonstration of Ge-on-Si APD for 1550 nm wavelength photodetection at the cryogenic temperature down to 11 K, with I-dark=0.369 mu A, R=4.84 A/W and G=1840 at V-bias = -20.8 V. (C) 2024 The Author(s)

引用

页数：3

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