Steering of sub-GeV positrons by ultrathin bent silicon crystal for ultraslow extraction applications

被引：0
|
作者：
Garattini, M. [1 ,2 ]
Annucci, D. [2 ,3 ]
Gianotti, P. [1 ]
Liedl, A. [1 ]
Long, E. [1 ]
Mancini, M. [1 ,4 ]
Napolitano, T. [1 ]
Raggi, M. [2 ,3 ]
Valente, P. [2 ]
机构：
[1] INFN, Lab Nazl Frascati, Via E Fermi 54, I-00054 Frascati, Italy
[2] INFN Roma 1, Ple Aldo Moro 5, I-00185 Rome, Italy
[3] Sapienza Univ Roma, Phys Dept, Ple Aldo Moro 5, I-00185 Rome, Italy
[4] Tor Vergata Univ Roma, Dept Phys, Via Ric Sci 1, I-00133 Rome, Italy
来源：
PHYSICAL REVIEW ACCELERATORS AND BEAMS | 2025年 / 28卷 / 02期
关键词：
BEAM; PROTONS;
D O I：
10.1103/PhysRevAccelBeams.28.023501
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
For the first time at the Beam Test Facility (BTF) of the DA Phi NE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the planar channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for ultraslow extraction from lepton circular accelerators like DA Phi NE. In this work, the experimental apparatus, the measurement procedure, and the experimental results are reported.
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页数：8
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