Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction

被引：0

作者：

Qu, Zhuangzhuang ^{[1
]}

Chen, Zhihao ^{[2
,3
]}

Han, Xiangyan ^{[1
]}

Wang, Zhiyu ^{[1
]}

Li, Zhuoxian ^{[1
]}

Liu, Qianling ^{[1
]}

Zhao, Wenjun ^{[1
]}

Watanabe, Kenji ^{[4
]}

Taniguchi, Takashi ^{[4
]}

Cheng, Zhi-Gang ^{[2
,3
]}

Gan, Zizhao ^{[1
]}

Lu, Jianming ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba 3050044, Japan

来源：

CHINESE PHYSICS B | 2025年 / 34卷 / 03期

基金：

国家重点研发计划;

关键词：

anomalous Hall effect; proximity effect; Bernal tetralayer graphene; spin-orbit interaction; 72.80.Vp; 73.40.-c;

D O I：

10.1088/1674-1056/adb411

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin-orbit interaction (SOI) can be introduced by the proximity effect to modulate the electronic properties of graphene-based heterostructures. In this work, we stack trilayer WSe2 on Bernal tetralayer graphene to investigate the influence of SOI on the anomalous Hall effect (AHE). In this structurally asymmetric device, by comparing the magnitude of AHE at positive and negative displacement fields, we find that AHE is strongly enhanced by bringing electrons in proximity to the WSe2 layer. Meanwhile, the enhanced AHE signal persists up to 80 K, providing important routes for topological device applications at high temperatures.

引用

页数：5

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