On Gate Flip Errors in Computing-In-Memory

被引:0
|
作者
Chowdhury, Zamshed, I [1 ]
Cilasun, Husrev [1 ]
Resch, Salonik [1 ]
Zabihi, Masoud [1 ]
Lv, Yang [1 ]
Zink, Brandon [1 ]
Wang, Jian-Ping [1 ]
Sapatnekar, Sachin S. [1 ]
Karpuzcu, Ulya R. [1 ]
机构
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源
2024 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, DATE | 2024年
关键词
computing in memory; error model; gate flips; NVM; MTJ;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Computing-in-memory (CIM) architectures that perform logic gate operations directly within memory arrays, in-situ, are particularly effective in addressing memory-induced performance bottlenecks. When paired with nonvolatile memory, energy efficiency in performing bulk bitwise logic operations can reach unprecedented levels. However, unlocking this potential is not possible if functional correctness is compromised. In this paper we present a CIM-specific class of functional errors termed gate flips, where parametric variations make a logic gate behave as another. Through detailed functional and electrical characterization we demonstrate that gate flips stem from a significant subclass of write errors. Accordingly, we introduce an abstract model to enable efficient functional reliability assessment and to guide design decisions in forming universal CIM gate libraries. We also evaluate the impact on the end accuracy of computation using representative benchmarks.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory
    Toprasertpong, Kasidit
    Matsui, Chihiro
    Takenaka, Mitsuru
    Takeuchi, Ken
    Takagi, Shinichi
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (46)
  • [22] Flash memory based computing-in-memory system to solve partial differential equations
    Yang FENG
    Fei WANG
    Xuepeng ZHAN
    Yuan LI
    Jiezhi CHEN
    Science China(Information Sciences), 2021, 64 (06) : 257 - 258
  • [23] Flash memory based computing-in-memory system to solve partial differential equations
    Yang Feng
    Fei Wang
    Xuepeng Zhan
    Yuan Li
    Jiezhi Chen
    Science China Information Sciences, 2021, 64
  • [24] Evaluation Platform of Time-Domain Computing-in-Memory Circuits
    Kong, Yuyao
    Chen, Xi
    Si, Xin
    Yang, Jun
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (03) : 1174 - 1178
  • [25] Automated Information Flow Analysis for Integrated Computing-in-Memory Modules
    Reimann, Lennart M.
    Staudigl, Felix
    Leupers, Rainer
    2023 21ST IEEE INTERREGIONAL NEWCAS CONFERENCE, NEWCAS, 2023,
  • [26] SWIM: SelectiveWrite-Verify for Computing-in-Memory Neural Accelerators
    Yan, Zheyu
    Hu, Xiaobo Sharon
    Shi, Yiyu
    PROCEEDINGS OF THE 59TH ACM/IEEE DESIGN AUTOMATION CONFERENCE, DAC 2022, 2022, : 277 - 282
  • [27] Circuit Design Challenges in Computing-in-Memory for AI Edge Devices
    Si, Xin
    Xue, Cheng-Xin
    Su, Jian-Wei
    Zhang, Zhixiao
    Li, Sih-Han
    Sheu, Shyh-Shyuan
    Lee, Heng-Yuan
    Chen, Ping-Cheng
    Wu, Huaqiang
    Qian, He
    Chang, Meng-Fan
    2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
  • [28] Cryogenic Operation of Computing-In-Memory based Spiking Neural Network
    Shamieh, Laith A.
    Wang, Wei-Chun
    Zhang, Shida
    Saligram, Rakshith
    Gaidhane, Amol D.
    Cao, Yu
    Raychowdhury, Arijit
    Datta, Suman
    Mukhopadhyay, Saibal
    PROCEEDINGS OF THE 29TH ACM/IEEE INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, ISLPED 2024, 2024,
  • [29] Computing-in-Memory for Performance and Energy-Efficient Homomorphic Encryption
    Reis, Dayane
    Takeshita, Jonathan
    Jung, Taeho
    Niemier, Michael
    Hu, Xiaobo Sharon
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2020, 28 (11) : 2300 - 2313
  • [30] Capacitance and Conductance Compensation Methods for Efficient Computing-In-Memory Designs
    Luo, Yubiao
    Qiao, Fei
    Sun, Zhong
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (12):