On Gate Flip Errors in Computing-In-Memory

被引:0
|
作者
Chowdhury, Zamshed, I [1 ]
Cilasun, Husrev [1 ]
Resch, Salonik [1 ]
Zabihi, Masoud [1 ]
Lv, Yang [1 ]
Zink, Brandon [1 ]
Wang, Jian-Ping [1 ]
Sapatnekar, Sachin S. [1 ]
Karpuzcu, Ulya R. [1 ]
机构
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源
2024 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, DATE | 2024年
关键词
computing in memory; error model; gate flips; NVM; MTJ;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Computing-in-memory (CIM) architectures that perform logic gate operations directly within memory arrays, in-situ, are particularly effective in addressing memory-induced performance bottlenecks. When paired with nonvolatile memory, energy efficiency in performing bulk bitwise logic operations can reach unprecedented levels. However, unlocking this potential is not possible if functional correctness is compromised. In this paper we present a CIM-specific class of functional errors termed gate flips, where parametric variations make a logic gate behave as another. Through detailed functional and electrical characterization we demonstrate that gate flips stem from a significant subclass of write errors. Accordingly, we introduce an abstract model to enable efficient functional reliability assessment and to guide design decisions in forming universal CIM gate libraries. We also evaluate the impact on the end accuracy of computation using representative benchmarks.
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页数:6
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