In-situ ion luminescence characterization of defects produced in diamond by 6 MeV carbon ion irradiation

被引:0
|
作者
Jia, Gangyuan [1 ,2 ]
Valls-Vicent, Francesc [2 ,3 ]
Padhi, Santanu Kumar [2 ]
Enriquez, Esther [2 ,3 ]
Garcia, Gaston [2 ,4 ]
Zhang, Yufei [1 ]
Olivares, Jose [1 ,2 ]
Wang, Kaiyue [1 ]
机构
[1] Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China
[2] Univ Autonoma Madrid UAM, Ctr Microanal Mat CMAM, Madrid 28049, Spain
[3] CSIC, Inst Opt Daza de Valdes, Madrid 28006, Spain
[4] UAM, Unidad Asociada CSIC IO, FOTIONICA, Madrid 28006, Spain
基金
中国国家自然科学基金;
关键词
Ionoluminescence; Defect evolution; Ion beam irradiation; Diamond; BEAM-INDUCED LUMINESCENCE; IMPLANTATION; MICROWAVE; DAMAGE;
D O I
10.1016/j.vacuum.2024.113951
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work is focused on the in-situ characterization of defects in single-crystal diamond induced by 6 MeV carbon ion beam irradiation using ionoluminescence (IL) spectroscopy. The main purpose was to study the optical properties of several defects following the IL evolution and characterize the damage degree using Raman spectra. Three emissions were recorded by IL spectra, located at 430, 504, 575.5 nm with ion fluence in the range of 0 similar to 7 x 10(14) cm(-2), and were attributed to the A-band, 3H, and NV0 centers, respectively. The 3H centers exhibited a non-monotonic behavior with respect to fluence, with a rapid initial increase followed by a gradual decay. Based on a double exponential model, the data had been well-fitted, and the value of fluence at half of the initial luminescence (F-1/2) was found to be notably high (of order 10(14) cm(-2)). A simple Birks-Black model was applied to fit the evolution of the A-band and NV0 centers, and luminescence decays were observed with F-1/2 values of (7.9 +/- 2.2) x 10(11) and (1.2 +/- 0.6) x 10(12) cm(-2), respectively. At the initial stage of irradiation, the intensity decay of A-band and NV0 centers is accompanied by an increase of 3H centers, suggesting that there is a conversion between the defect types.
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页数:7
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