Photoelectric Properties of the g-ZnO/β-Ga2O3 Heterojunction

Heterojunction structures significantly influence the performance and function of beta-Ga2O3-based photodetectors through their unique material combination and interface control. The electronic structure, photoelectric properties, and mechanism of the g-ZnO/beta-Ga2O3 heterojunction are analyzed using the first-principles calculations. The results show that the g-ZnO/beta-Ga2O3 heterojunction is a direct bandgap semiconductor, featuring an internal electric field directed from the g-ZnO layer to the beta-Ga2O3 layer. It demonstrates strong light absorption and an electric field response in the UV range of 200-310 nm. The conduction and valence band offsets are 0.731 and 2.231 eV, respectively, indicating efficient charge transport in the heterojunction. The mechanism for photogenerated carrier transfer follows an S-type heterojunction, which meets the requirements for photocatalytic water decomposition in the pH range of 0-14. In summary, the g-ZnO/beta-Ga2O3 heterojunction is a promising photocatalytic material for optoelectronic components and photocatalysis.