Balancing Current Sharing in Paralleled Silicon Carbide MOSFETs with an Active Compensator

Silicon carbide power devices are widely utilized in applications requiring high voltage and current. Due to the limited current capability of a single module, silicon carbide MOSFETs are frequently arranged in parallel to enhance the current capacity of the final product. However, variations in circuit parameters or inconsistencies in semiconductor manufacturing can cause imbalances in the current among the parallel modules, potentially resulting in performance and dependability challenges. To tackle the matter, this paper introduced the use of an active approach designed for paralleled SiC MOSFETs to resolve these unbalanced currents. The proposed method used a current transformer to detect the imbalance current. Further, an active compensator is presented within a closed-loop control feedback that effectively eliminates the current imbalance among parallell modules in a master-slave configuration. Details of current transformer and stability of the closed-loop control are investigated. Experimental results are provided to showcase the viability and efficiency of the proposed approach.